2sd2092 2006-11-21 1 toshiba transistor silicon npn epitaxial type 2sd2092 switching applications lamp, solenoid driv e applications ? high dc current gain: h fe (1) = 500 to 1500 ? low collector saturation voltage: v ce (sat) = 0.3 v (max) absolute maximum ratings (tc = 25c) characteristics symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 7 v dc i c 3 collector current pulse i cp 5 a base current i b 1 a ta = 25c 2.0 collector power dissipation tc = 25c p c 25 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability signific antly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). equivalent circuit unit: mm jedec D jeita sc-67 toshiba 2-10r1a weight: 1.7 g (typ.) base emitter collector
2sd2092 2006-11-21 2 electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 100 v, i e = 0 D D 10 a emitter cut-off current i ebo v eb = 7 v, i c = 0 D D 10 a collector-emitter breakdown voltage v (br) ceo i c = 50 ma, i b = 0 100 D D v h fe (1) v ce = 1 v, i c = 0.5 a 500 D 1500 dc current gain h fe (2) v ce = 1 v, i c = 1 a 150 D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 10 ma D D 0.3 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 10 ma D D 1.2 v collector-emitter forward voltage v ecf i e = 1 a, i b = 0 D D 2.0 v transition frequency f t v ce = 5 v, i c = 0.5 a D 140 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 30 D pf turn-on time t on D 0.5 D storage time t stg D 5 D switching time fall time t f i b1 = ? i b2 = 10 ma, duty cycle 1% D 0.7 D s marking i b1 20 s v cc = 30 v output 30 ? i b2 i b1 input i b2 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. d2092 part no. (or abbreviation code)
2sd2092 2006-11-21 3 collector current i c (a) v ce ? i c collector-emitter voltage v ce (v) collector current i c (a) v ce ? i c collector-emitter voltage v ce (v) ) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) v ce ? i c collector-emitter voltage v ce (v) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) h fe ? i c dc current gain h fe 0 common emitter tc = 10 0 c 0.2 0.4 0.6 0.8 1.0 1.2 i b = 0.5 ma 10 20 40 30 80 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 14 4 2 common emitter tc = ? 55c 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 i b = 0.5 ma 2 4 40 20 80 14 10 30 0.05 common emitter tc = 25 c 50 100 300 500 1000 3000 0.1 0.3 1 3 5 10 1 v ce = 5 v 0.5 2 common emitter v ce = 1 v ? 55 25 tc = 100c 50 100 300 500 1000 3000 0.05 0.1 0.3 1 3 5 10 0.5 common emitter tc = 25 c 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 i b = 0.5 ma 2 4 40 20 80 14 10 30 2.8 0 0 i b = 0.2 ma common emitter tc = 25 c 4 10 0.8 1.6 2.4 4 8 12 16 18 1.4 20 0 2 6 10 14 0.4 1.2 2.0 2 1 0.5
2sd2092 2006-11-21 4 collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) 0.1 0.05 common emitter i c /i b = 100 0.1 0.3 0.5 1 3 0.3 0.5 1 3 5 100 25 tc = ? 55c 0.03 0.05 common emitter i c /i b = 100 0.3 0.5 1 3 5 10 0.05 0.1 0.3 1 3 ? 55 25 tc = 100c 0.1 0.5 0 0 0.5 1.5 2.5 3.0 0.4 0.8 1.2 1.4 1.6 common emitter v ce = 1 v ? 55 25 tc = 100c 1.0 0.6 0.2 1.0 2.0 pulse width t w (s) r th ? t w transient thermal resistance r th (c/w) 0.001 1000 10 100 0.01 0.1 30 0.3 3 1 100 10 1 curves should be applied in thermal limited area. ( ingle nonrepetitive pulse) (1) infinite heat sink (2) no heat sink (1) (2) collector-emitter voltage v ce (v) safe operating area collector current i c (a) 0.03 2 5 10 30 50 100 200 0.05 0.1 0.3 0.5 1 3 5 10 10 ms * 100 ms * 1 ms * v ceo max * : single nonrepetitive pulse tc = 25 c curves must be derated linearly with increase in temperature. 100 s* i c max (pulsed) * i c max (continuous) dc operation tc = 25c
2sd2092 2006-11-21 5 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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